NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nitride semiconductor device and a manufacturing method thereof are provided to improve light emitting efficiency by reducing an amount of the light absorbed and vanished inside a light emitting structure through a plurality of nitride based particle lumps made of the quantum positioned in the n type clad layer. An n-type clad layer(120) is formed on a substrate(100). An active layer(130) is formed on the n-type clad layer. A p-type clad layer(140) is formed on the active layer. A P type electrode(160) is formed on the p-type clad layer. An n-type electrode(170) is formed on the n-type clad layer. The n-type clad layer is formed by a MOCVD deposition method. A buffer layer(110) is formed in the interface of the n-type clad layer and the substrate.