发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus, which achieves uniformity of cooling gas pressure around a through-hole of a sample stage, and which prevents the generation of a temperature difference between a pusher pin and the sample stage. SOLUTION: The vacuum processing apparatus includes: a vacuum processing chamber; a high-frequency power supply for plasma generation; a sample stage on which a workpiece is placed and which includes a cooling medium passage for controlling a temperature of the workpiece; an electrostatic adsorption power supply for electrostatically adsorbing the workpiece onto the sample stage; a means for supplying a gas for controlling the temperature of the workpiece between the workpiece and the sample stage; and a pusher pin disposed in the through-hole provided on the sample stage for vertically moving the workpiece; wherein the pusher pin is configured to close the through-hole and to obtain excellent heat transfer by being brought into tight contact with the sample stage during processing of the workpiece. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010021405(A) 申请公布日期 2010.01.28
申请号 JP20080181297 申请日期 2008.07.11
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KAWAKAMI MASATOSHI;ARAMAKI TORU;YOKOGAWA KATANOBU;SHIRAYONE SHIGERU
分类号 H01L21/3065;H01L21/304;H01L21/683 主分类号 H01L21/3065
代理机构 代理人
主权项
地址