发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus, which achieves uniformity of cooling gas pressure around a through-hole of a sample stage, and which prevents the generation of a temperature difference between a pusher pin and the sample stage. SOLUTION: The vacuum processing apparatus includes: a vacuum processing chamber; a high-frequency power supply for plasma generation; a sample stage on which a workpiece is placed and which includes a cooling medium passage for controlling a temperature of the workpiece; an electrostatic adsorption power supply for electrostatically adsorbing the workpiece onto the sample stage; a means for supplying a gas for controlling the temperature of the workpiece between the workpiece and the sample stage; and a pusher pin disposed in the through-hole provided on the sample stage for vertically moving the workpiece; wherein the pusher pin is configured to close the through-hole and to obtain excellent heat transfer by being brought into tight contact with the sample stage during processing of the workpiece. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010021405(A) |
申请公布日期 |
2010.01.28 |
申请号 |
JP20080181297 |
申请日期 |
2008.07.11 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
KAWAKAMI MASATOSHI;ARAMAKI TORU;YOKOGAWA KATANOBU;SHIRAYONE SHIGERU |
分类号 |
H01L21/3065;H01L21/304;H01L21/683 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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