Method of manufacturing silicon carbide substrate

摘要

A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide and obtaining a substrate by cutting the ingot. Then, in the step of obtaining a substrate, cutting proceeds in a direction α in which an angle β formed with respect to a <11-20> direction or a <1-100> direction of the ingot is 15°±5° in an orthogonal projection on a {0001} plane.

主权项

1. A method of manufacturing a silicon carbide substrate, comprising the steps of:
preparing a crystal of single crystal silicon carbide having a cleavage direction that appears every 30 degrees in an orthogonal projection on a {0001} plane; and obtaining a substrate by cutting said crystal, wherein in said step of obtaining a substrate, the cutting of said crystal proceeds in a direction in which an angle formed with respect to a <11-20> direction or a <1-100> direction of said crystal is 15°±5° in the orthogonal projection on the {0001} plane, and in said step of obtaining a substrate, said crystal is cut such that a ratio of a diameter to a thickness of said substrate is not smaller than 100.