发明名称 Thermoelectric device and method of manufacturing the same
摘要 Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.
申请公布号 US9437795(B2) 申请公布日期 2016.09.06
申请号 US201514731989 申请日期 2015.06.05
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 Jun Dong Suk;Jang Moon Gyu;Choi Won Chul
分类号 H01L35/34;H01L35/14;H01L35/26;H01L35/02 主分类号 H01L35/34
代理机构 Rabin & Berdo, P.C. 代理人 Rabin & Berdo, P.C.
主权项 1. A thermoelectric device comprising: first and second cooling pads; first and second lower electrodes that are respectively disposed on the first and second cooling pads; first and second substrates that are respectively disposed on the first and second lower electrodes; first and second nanowires that are respectively disposed on the first and second substrates; first and second barrier layers that are respectively disposed on the first and second nanowires; first and second bulk layers that are respectively disposed on the first and second barrier layers; first and second upper electrodes respectively on the first and second bulk layers; and a heater pad that is disposed on the first and second upper electrodes and connects the first and second upper electrodes, wherein the first and second barrier layers increase electric conductivity between the first and second nanowires and the first and second bulk layers, and decrease thermal conductivity therebetween.
地址 Daejeon KR