发明名称 Semiconductor device with antenna and light-emitting element
摘要 When a conductive layer occupying a large area is provided in a coiled antenna portion, it has been difficult to supply power stably. A memory circuit portion and a coiled antenna portion are disposed by being stacked together; therefore, it is possible to prevent a current from flowing through a conductive layer occupying a large area included in the memory circuit portion, and thus, power saving can be achieved. In addition, the memory circuit portion and the coiled antenna portion are disposed by being stacked together, and thus, it is possible to use a space efficiently. Therefore, downsizing can be realized.
申请公布号 US9437777(B2) 申请公布日期 2016.09.06
申请号 US201414306559 申请日期 2014.06.17
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Takano Tamae;Ohsawa Nobuharu;Kato Kiyoshi
分类号 H01L33/00;H01L35/24;H01L29/00;H01L33/36;H01L51/50;H01L51/52;H01L23/522;H01L27/06;H01L27/12;H01L27/13;H01Q1/22;H01Q9/27;H01L51/05;H01L23/498;H01L23/66;H01F5/00 主分类号 H01L33/00
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A semiconductor device comprising: a semiconductor circuit portion and a light-emitting circuit portion side by side over a substrate having an insulating surface; and a conductive layer portion over the light-emitting circuit portion, wherein the light-emitting circuit portion comprises an entirety of light-emitting elements comprised in said semiconductor device, each of said light-emitting elements comprising a first electrode, a second electrode and a layer containing an organic compound interposed between the first electrode and the second electrode, wherein the light-emitting circuit portion is electrically connected to the semiconductor circuit portion, wherein the light-emitting circuit portion has a length and a width shorter than the length, wherein an entirety of the semiconductor circuit portion is surrounded by, but not directly overlapped with, the conductive layer portion when seen from a top of the semiconductor device, wherein the conductive layer portion overlaps with an entirety of the length of the light-emitting circuit portion, wherein the conductive layer portion overlaps with a part of the width of the light-emitting circuit portion, and wherein the conductive layer portion comprises an opening disposed over the light-emitting element of the light-emitting circuit portion wherein the conductive layer portion comprises a power feeding portion and a plurality of linear or stripe-shaped conductive layer conductors, and the conductive layer conductor is provided in spirals from a periphery of the power feeding portion toward the power feeding portion.
地址 Kanagawa-ken JP