METHOD FOR MANUFACTURING MASK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a mask of a semiconductor device is provided to improve a DoF margin of a cutting mask by changing a partition mask into a dogbon pattern shape. CONSTITUTION: A first sensitive film pattern of a dogbon shape is formed. Spacers are formed at the sidewall of the first sensitive film pattern. The spacers comprise a nitride film. A second sensitive film pattern is formed between the spacers. The second sensitive film pattern is a negative sensitive film. The spacers are eliminated. A first pattern is formed by etching the second sensitive film pattern by using a cutting mask as an etching mask. An isolation pattern(270) is formed by etching the first pattern by using a pad mask as the etching mask.