| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus, a plasma processing apparatus and a film deposition method that enable a metal thin film to be deposited with high adhesion over the entire region of a resin surface even when using resin, such as methacrylate resin, having low adhesion to the metal thin film.SOLUTION: A film deposition apparatus comprises: a film deposition chamber 10 composed of a body 11 and an opening/closing part 12; a sputtering electrode 23 constituted of an electrode part 21 and a target material 22; and a pair of CVD electrodes 24, 25 as a counter electrode supporting a work W and arranged on both sides of a work mount part 13. The body 11 constituting the film deposition chamber 10 is connected to a supply part 33 for inert gas by a pipe conduit 55 through an on-off valve 31 and a flow regulating valve 32. Further, the body 11 constituting the film deposition chamber 10 is connected to a supply part 36 for Si-based material by the pipe conduit 55 through an on-off valve 34 and a flow regulating valve 35.SELECTED DRAWING: Figure 1 |
