| 摘要 |
PROBLEM TO BE SOLVED: To achieve plasma processing inexpensively even under a pressure higher than the vacuum, by increasing the electric field strength occurring in a microwave plasma generation device, without increasing the capacity of a microwave generation source.SOLUTION: A microwave plasma generation device includes a waveguide 130 formed in a tube shape and for propagating microwaves in a tube and having a slot 130a extending in the direction of travel of microwaves while penetrating the inner and outer faces of the tube, a sealing part 132 composed of a dielectric and sealing the slot from the inside of the waveguide, and a gas introduction part 136 for introducing reaction gas from the outside of the waveguide. A notch 150 extending from the slot is provided in the abutting surface of the waveguide and the sealing part. |
