| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing material for polysilicon for finishing small stepped area between the polysilicon and silicon nitride and oxide film exposed with the polishing, by maintaining the polishing rate by higher CMP in the polysilicon polishing process to form a device on a semiconductor wafer. <P>SOLUTION: The polishing material for polishing a film is mainly formed of polysilicon in the semiconductor integrated circuit manufacturing process, aluminum oxide and water are included as polishing particle, and pH is ranged from 10.5 to 11.5. The polishing method uses the polishing material for polishing the film which is mainly formed of polysilicon in the semiconductor integrated circuit manufacturing process. In the polishing material for polysilicon, aluminum oxide and water are included as the polishing particle, one or more of hydrogen peroxide, periodate, perchlorate, or persulfate are included, and pH is ranged from 3 to 5.5. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
