| 摘要 |
PROBLEM TO BE SOLVED: To provide a storage device capable of stable recording, shortening time required for recording information and achieving writing and erasure. SOLUTION: The storage device is constituted so that a memory cell is configured by having a memory element, to which the writing is performed by applying voltage larger than a first voltage threshold and the erasure is performed by applying the voltage larger than a second voltage threshold and a MOS transistor. A common potential is applied to one end of the memory cell and a first potential (high potential) and a second potential (low potential) are applied to the other end of the memory cell. When the storage element is written by applying the first potential to the other end of the memory cell, the storage element and an Nmos are connected for constituting the memory cell. When the storage element is written by applying the second potential to the other end of the memory cell, the storage element and a Pmos are connected for constituting the memory cell. COPYRIGHT: (C)2007,JPO&INPIT |
