| 摘要 |
A GaInZnO diode is provided to obtain thermal stability, and to maintain stability to visible light by using a GaInZnO active layer. A first electrode(110) and a second electrode(120) are installed apart from each other. An active layer(130) is formed between the first electrode and the second electrode. The active layer is formed MxIn1-xZnO where M is formed with a third group metal. The first electrode has a work function smaller than a work function of the active layer. The second electrode is formed with a material having a work function larger than a work function of the active layer. The third group metal is selected from a group including Ga, Al, and Ti. In the active layer, x is 0.2 to 0.8. The first electrode is formed with one selected from a group including Ti, Al, Ca, and Li. The second electrode is formed with one selected from a group including Pt, Mo, W, and Ir.
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