发明名称 Semiconductor Light Emitting Diode Comprising Uneven Substrate
摘要 At least one depression (20) and /or projection (21) for scattering or diffracting light generated in a light emitting region (12) is formed in the surface of a substrate (10). The recess and /or projection is so shaped as to generate no crystal defects in semiconductor layers (11, 13)
申请公布号 KR101171135(B1) 申请公布日期 2012.08.06
申请号 KR20077017029 申请日期 2002.07.24
申请人 发明人
分类号 H01L33/22;H01L33/38;H01L33/00;H01L33/24;H01L33/32;H01L33/42 主分类号 H01L33/22
代理机构 代理人
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