| 摘要 |
PROBLEM TO BE SOLVED: To provide a back surface grinding method for a wafer which makes the recovery of fine silicon particles possible while it is impossible by conventional back surface grinding. SOLUTION: (a) In an integrated circuit pattern forming process for forming an integrated circuit pattern on a front surface; the back surface of the wafer (S) where an impurity layer (sf) is stack on the back surface is ground to remove at least the impurity layer (sf), (b) the impurities of the wafer (S) are removed and washed for which impurity layer removing back surface grinding is ended, (c) the back surface of the wafer (S) is ground after the impurities are washed while supplying pure water to turn the wafer (S) to a prescribed thickness and the fine silicon particles generated by grinding are recovered together with the pure water, and thereafter, (d) the finish grinding is performed in the back surface of the wafer (S). COPYRIGHT: (C)2008,JPO&INPIT
|
