| 摘要 |
PROBLEM TO BE SOLVED: To provide a signal converting device that is suitably constituted as a solid-state imaging element including a floating diffusion amplifier formed of an FD region, assuring small capacity and higher charge-voltage converting efficiency as a signal charge detecting means; and to provide a method for manufacturing the same device ensuring higher productivity and manufacturing yield, and a signal measuring system using the same signal converting device. SOLUTION: The signal converting device is formed of a charge generating unit for generating signal charges in accordance with signal intensity, an FD region 18 for receiving and holding the charges transferred from the charge generating unit, and a buffer circuit for converting a voltage change of the FD region 18 by signal charges into an impedance. In this case, a connecting hole 44 is formed through an interlayer insulating film 42 and a surface insulating layer 12, a connection 19 is formed in contact with a semiconductor substrate 11 at the connecting hole 44 and, is coupled at its other end side to an input stage gate electrode 33 of a buffer circuit; and the FD region 18 is formed with diffusion of an impurity to the semiconductor substrate 11 from the connection 19. COPYRIGHT: (C)2008,JPO&INPIT
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