| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing formation of an organic impurity layer and having good bondability between a copper film and a metal as a base. SOLUTION: A substrate (wafer W) coated with a barrier metal layer 13 (base film) made of a metal having a high oxidation tendency such as titanium is placed in a processing chamber, and a material gas made of an organic compound of copper (e.g. Cu(hfac)TMVS) simultaneously with start of steam supply or thereafter, and a copper film is formed on the surface of the barrier metal layer 13 having an oxide layer 13a by the steam. Subsequently, heat treatment is applied to the wafer W to convert the oxide layer 13a into an alloy layer 13b of the metal constituting the barrier metal layer 13 and copper. COPYRIGHT: (C)2008,JPO&INPIT
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