| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target capable of manufacturing an oxide semi-conductor film having excellent surface smoothness free from any abnormal film quality while suppressing abnormal discharge generated when depositing the oxide semi-conductor film by using a sputtering method. <P>SOLUTION: A sputtering target contains oxides of indium (In), gallium (Ga) and zinc (Zn), and contains a compound expressed as ZnGa<SB>2</SB>O<SB>4</SB>and a compound expressed as InGaZnO<SB>4</SB>. <P>COPYRIGHT: (C)2008,JPO&INPIT |
