| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device for which a complex manufacturing process is not required, and in which power consumption can be suppressed, and also to provide a signal processing circuit including the memory device.SOLUTION: A memory element uses a phase-inversion element, such as an inverter or a clocked inverter, by which a phase of an inputted signal is inverted, and the signal is outputted. In the memory element, a capacitor element for holding data and a switching element for controlling charging and discharging of electric charge in the capacitor element, are provided. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. The memory element is used in a memory device such as a register or a cache memory included in a signal processing circuit.SELECTED DRAWING: Figure 1 |
