| 摘要 |
A semiconductor device includes: an interconnection substrate on which a semiconductor chip is mounted; electrodes formed on a surface of the interconnection substrate; and solder bumps formed on the electrodes. The solder bump includes a base section and a surface layer section that covers the base section. The surface layer section includes conductive metal selected from the group consisting of Cu, Ni, Au, and Ag, and Sn at least and a ratio of the number of atoms of the conductive metal to the number of Sn atoms per a unit volume is more than 0.01.
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