LIGHT EMITTING DEVICE

摘要

A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

主权项

1. A light emitting device, comprising:
a substrate; first and second light emitting cells spaced apart from one another on the substrate, each including:
a light emitting structure including:
lower and upper semiconductor layers, conductive types of the lower and upper semiconductor layers being different from each other;an active layer provided between the lower and upper semiconductor layers;an upper electrode on the upper semiconductor layer;a lower electrode on the lower semiconductor layer; anda conductive layer on the upper semiconductor layer;a conductive interconnection layer configured to electrically connect a lower electrode of the first light emitting cell and an upper electrode of the second light emitting cell; anda current blocking layer provided so as to extend from between the upper electrode of the second light emitting cell and the upper semiconductor layer of the second light emitting cell, and provided between the light emitting structure of the second light emitting cell and the conductive interconnection layer to electrically separate the conductive interconnection layer from the light emitting structure of the second light emitting cell, wherein the conductive layer extends from between the upper electrode of the second light emitting cell and the current blocking layer to on the upper semiconductor layer of the second light emitting cell and is configured to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell, wherein the upper electrode of the second light emitting cell, the lower electrode of the first light emitting cell, and the conductive interconnection layer are formed as an integration layer, and wherein the integration layer includes an adhesive layer and a bonding layer that overlap each other, a reflection layer not being provided between the adhesive layer and the bonding layer.