| 摘要 |
The present invention relates to a substrate treatment apparatus, and more specifically, to a gas supply control method for a substrate treatment apparatus which deposits a thin film on a substrate by the supply of first gas and second gas. According to the present invention, the gas supply control method for a substrate treatment apparatus comprising a process chamber forming a sealed treatment space and a gas spray unit spraying first gas, second gas, and purge gas into the treatment space in the process chamber comprises: a first gas supply step of supplying the first gas to the gas spray unit from a first gas supply source at a first setting supply pressure which was set previously; a first purge step of spraying the purge gas to discharge the first gas from the treatment space; a second gas supply step of supplying the second gas to the gas spray unit from a second gas supply source at a second setting supply pressure which was set previously; and a second purge step of spraying the purge gas to discharge the second gas from the treatment space. The gas supply control method for a substrate treatment apparatus further comprises a second gas preparation step of supplying second carrier gas to the second gas supply source having a second precursor prior to the second gas supply step to allow a pressure of the second gas to reach the second setting supply pressure which was set previously. |
