发明名称 |
HEAT RADIATION SUBSTRATE AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a heat radiation substrate that has a high heat radiation efficiency and that can reduce protrusion of solder from an opposite side surface.SOLUTION: A heat radiation substrate 1 comprises: a substrate 11; a thermal via 12 that is a through-hole penetrating from a front face 111 of the substrate 11 to a rear face 112, and whose inner wall surface is treated with plating 121 by metal; a land 13 that consists of a metal foil formed on the front face 111 so as to have a notch part 130 extending from a peripheral part of the thermal via 12 toward the thermal via 12; and a solder resist 14 formed on the land 13 so as to surround a periphery of the thermal via 12 except for the notch part 130.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016181575(A) |
申请公布日期 |
2016.10.13 |
申请号 |
JP20150060339 |
申请日期 |
2015.03.24 |
申请人 |
NISSAN MOTOR CO LTD |
发明人 |
HATAKEYAMA TOSHIYUKI;OGURI KENSAKU |
分类号 |
H01L23/40;H01L23/12;H05K1/02 |
主分类号 |
H01L23/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|