发明名称 HEAT RADIATION SUBSTRATE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a heat radiation substrate that has a high heat radiation efficiency and that can reduce protrusion of solder from an opposite side surface.SOLUTION: A heat radiation substrate 1 comprises: a substrate 11; a thermal via 12 that is a through-hole penetrating from a front face 111 of the substrate 11 to a rear face 112, and whose inner wall surface is treated with plating 121 by metal; a land 13 that consists of a metal foil formed on the front face 111 so as to have a notch part 130 extending from a peripheral part of the thermal via 12 toward the thermal via 12; and a solder resist 14 formed on the land 13 so as to surround a periphery of the thermal via 12 except for the notch part 130.SELECTED DRAWING: Figure 3
申请公布号 JP2016181575(A) 申请公布日期 2016.10.13
申请号 JP20150060339 申请日期 2015.03.24
申请人 NISSAN MOTOR CO LTD 发明人 HATAKEYAMA TOSHIYUKI;OGURI KENSAKU
分类号 H01L23/40;H01L23/12;H05K1/02 主分类号 H01L23/40
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