| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory unit having a voltage transmission device.SOLUTION: A floating gate transistor FGT1 has a first terminal for receiving a bit line signal, a second terminal, and a floating gate. A word line transistor WLT1 has a first terminal which is connected to the second terminal of the floating gate transistor, a second terminal which is configured to receive a third voltage GND, and a control terminal for receiving a word line signal. A first voltage transmission device 130 is for outputting a second voltage during a prohibition operation and a first voltage during a program operation or erasure operation. A first capacitance element 110 is connected to the first voltage transmission device and floating gate and is for receiving a first control signal CS1.SELECTED DRAWING: Figure 1 |
