发明名称 NANOSTRUCTURED GRAPHENE WITH ATOMICALLY-SMOOTH EDGES
摘要 Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.
申请公布号 US2016368773(A1) 申请公布日期 2016.12.22
申请号 US201615184036 申请日期 2016.06.16
申请人 Wisconsin Alumni Research Foundation 发明人 Arnold Michael Scott;Gopalan Padma;Safron Nathaniel S.;Kim Myungwoong
分类号 C01B31/04 主分类号 C01B31/04
代理机构 代理人
主权项 1. Patterned graphene comprising a layer of graphene having plurality of features defined therein, wherein the features have internal or external edges that are aligned with the crystallographic direction of the graphene lattice and further wherein the plurality of features comprises at least 1,000 features.
地址 Madison WI US