发明名称 |
Method of forming improved thick plated copper interconnect and associated auxiliary metal interconnect |
摘要 |
A thick plated interconnect (80) may be fabricated by forming a metal layer (20) above a semiconductor layer (12). A dielectric layer (22) may be formed on the metal layer (20). A via (24) may be formed in the dielectric layer (22) to expose the metal layer (20). A copper lead (50) may be formed electrically coupled to the metal layer (20) through the via (24) of the dielectric layer (22). A barrier member (88) may be formed on the copper lead (50). A bondable member (86) comprising aluminum may be formed on the barrier member (88).
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申请公布号 |
US6025275(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19970991997 |
申请日期 |
1997.12.17 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
EFLAND, TAYLOR R.;MAI, QUANG X.;WILLIAMS, CHARLES E.;KELLER, STEPHEN A. |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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