摘要 |
A method ( 40 ) for fabricating a nanoscale device, includes nano-imprinting ( 44 ) a one dimensional nanostructure ( 20 ) on a material ( 12 ), forming ( 46 ) a patterning layer ( 22, 26 ) over the one dimensional nanostructure ( 20 ) and the material ( 12 ), patterning ( 48 ) the patterning layer ( 22, 26 ) to differentiate an area over the one dimensional nanostructure ( 20 ), and etching ( 52, 56 ) the differentiated area and a portion of the material ( 12 ) to create a trench ( 24 ) under the one dimensional nanostructure ( 20 ). The one dimensional nanostructure ( 20 ) is coupled to circuitry ( 30 ) formed in the material ( 12 ).
|