| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can perform low power consumption operation with high oscillation efficiency. <P>SOLUTION: A ridge waveguide-type semiconductor laser element comprises a first conductive lower clad layer, an active layer, a second conductive first upper clad layer containing Al, a second conductive second upper clad layer of stripe ridge shape, and a second conductive contact layer. When the first upper clad layer has electron affinity of χ1 and forbidden band width of Eg1, and the contact layer has electron affinity of χ2 and forbidden band width of Eg2; a relation of (χ1+Eg1)>(χ2+Eg2) is satisfied if the first conductivity type is n-type and the second conductivity type is p-type, a relation of χ1<χ2 is satisfied if the first conductivity type is p-type and the second conductivity type is n-type, an oxide layer is formed by surface oxidation of the first upper clad layer in a region excepting directly under the ridge, and a metal electrode layer is provided to directly cover the contact layer on top of the ridge, the side face of the ridge and the oxide layer continuously. <P>COPYRIGHT: (C)2008,JPO&INPIT |
