| 摘要 |
PROBLEM TO BE SOLVED: To selectively form a bismuth-layer-like ferrodielectric film on a lower electrode by avoiding an insulating film. SOLUTION: A method for forming the bismuth-layer-like ferrodielectric film includes a step (a) of forming a polycrystalline conductive film 110 in an amorphous insulating film 181, formed on a board 100 so as to expose a part of the polycrystalline conductive film 110, and a step (b) of selectively forming the bismuth-layer-like ferrodielectric film 111 on the exposed portion of the polycrystalline conductive film 110. At the step (b), the formation of an oxide film, containing a constituent element of the bismuth-layer-like ferrodielectric film 111 on the amorphous insulating film 181, is prevented. COPYRIGHT: (C)2008,JPO&INPIT
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