| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical MOS semiconductor device having a top gate structure which can enhance latch-up resistance quantity without increasing on voltage, and to provide a method of manufacturing the same. SOLUTION: In the vertical MOS semiconductor device having a top gate structure, the structure is configured in such a way that the body region of the other conductive type is disposed closer to the second opening section than to the end part of the gate oxide film while assuring the channel formation directly under a gate insulating film at a cathode layer. COPYRIGHT: (C)2009,JPO&INPIT
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