| 发明名称 |
Extreme Ultraviolet Lithography Collector Contamination Reduction |
| 摘要 |
An extreme ultraviolet (EUV) radiation source module includes a target droplet generator, a first laser source, and a second laser source. The target droplet generator is configured to generate a plurality of target droplets. The first laser source is configured to generate a plurality of first laser pulses that heat the target droplets at respective excitation positions thereby generating a plurality of target plumes. At least one of the target droplets is heated at an excitation position different from that of other target droplets. The second laser source is configured to generate a plurality of second laser pulses that heat the target plumes thereby generating plasma emitting EUV radiation. |
| 申请公布号 |
US2016320708(A1) |
申请公布日期 |
2016.11.03 |
| 申请号 |
US201514803849 |
申请日期 |
2015.07.20 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
LU YEN-CHENG;CHEN JENG-HORNG;WU SHUN-DER;CHEN TZU-HSIANG |
| 分类号 |
G03F7/20;H05G2/00 |
主分类号 |
G03F7/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An extreme ultraviolet (EUV) radiation source module, comprising:
a target droplet generator configured to generate a plurality of target droplets; a first laser source configured to generate a plurality of first laser pulses that heat the target droplets thereby generating a plurality of target plumes, wherein at least one of the target droplets is heated at an excitation position different from that of other target droplets; and a second laser source configured to generate a plurality of second laser pulses that heat the target plumes thereby generating plasma emitting EUV radiation. |
| 地址 |
Hsin-Chu TW |
