| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having satisfactory high frequency characteristics such as high-frequency amplification factor, noise characteristic, etc. SOLUTION: This device comprises a first conductivity-type (p-type) semiconductor substrate 1, a second conductivity-type (n+-type) source regions 4 disposed on the p-type substrate 1, a second conductivity-type (n+-type) drain regions 5 distant from the source regions 4 on the p-type substrate 1 surface, gate electrodes 7 disposed via a first (gate) insulation film 6 between the source regions 4 and the drain regions 5 on the p-type substrate 1, and a conductive shield film 13 disposed via a second (interlayer) insulation film 9 on at least the source regions 4 and the gate electrodes 7 and connected to the ground potential. |
