III NITRIDE SEMICONDUCTOR VERTICAL-TYPE-STRUCTURE LED CHIP AND PROCESS FOR PRODUCTION THEREOF

摘要

PURPOSE: An LED chip with a vertical structure of an III group nitride semiconductor and a manufacturing method thereof are provided to reduce a crack by decreasing stress applied to each light emitting structure laminate. CONSTITUTION: A connection layer for the connection of an ohmic electrode layer and a conductive supporter(107) is formed on a plurality of light emitting structure units(106). The conductive supporter functioning as a bottom electrode is formed by using the connection layer. A growth substrate is lifted off from the plurality of the light emitting structure units. A plurality of LED chips with the light emitting structure unit supported by a support unit are divided by cutting the supporter between the light emitting structure units.