SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a desired work function by especially suppressing a reaction between a high dielectric constant material and a gate electrode material, which causes a fermi level pinning phenomenon, and to increase uniformity and yield in a CMOS transistor structure employing a full silicide gate or a metal gate. SOLUTION: A CMOS semiconductor apparatus is provided with an n-type transistor having a gate insulation film 104A consisting of an HfSiON and a gate electrode 106B wholly consisting of a nickel silicide, and a p-type transistor having a gate insulation film 104A consisting of an HfSiON and a gate electrode 106D wholly consisting of a nickel silicide, both electrodes being successively formed on a substrate 101 made of Si. The metal concentration of a p-side gate electrode 106C is set higher than the metal concentration of the n-side gate electrode 106B. COPYRIGHT: (C)2007,JPO&INPIT