| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus for suppressing charge damage on a gate insulating film even when the dry etching to form wiring progresses. SOLUTION: The method comprises the steps of forming a first conductive film 11 on an insulating film 8, forming a second conductive film 12 on or above the first conductive film 11, forming a mask film 50 on or above the second conductive film 12, patterning the second conductive film 12 by drying etching the second conductive film 12 with the mask film 50 used as a mask and the first conductive film 11 as a stopper, and patterning the first conductive film 11 by etching the first conductive film 11 with the mask film 50 and the second conducive film 12 used as a mask. A wiring pattern is formed with the steps of patterning the second conductive film 12 and the first conductive film 11. COPYRIGHT: (C)2007,JPO&INPIT
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