发明名称 |
LOW-TEMPERATURE OXIDE REMOVAL USING FLUORINE |
摘要 |
A method and system for processing a substrate includes providing the substrate in a process chamber, the substrate having an oxide layer formed thereon, and exposing the substrate to an etching gas containing F<SUB>2</SUB> gas at a first temperature to remove the oxide layer from the substrate. The substrate may subsequently be heated to a second temperature greater than the first temperature, and a film may then be formed on the substrate at the second temperature. In one embodiment, a Si film is epitaxially formed on a Si substrate. |
申请公布号 |
WO2007021403(A3) |
申请公布日期 |
2007.08.30 |
申请号 |
WO2006US26848 |
申请日期 |
2006.07.13 |
申请人 |
TOKYO ELECTRON LIMITED;DIP, ANTHONY;LEITH, ALLEN, JOHN;OH, SEUNGHO |
发明人 |
DIP, ANTHONY;LEITH, ALLEN, JOHN;OH, SEUNGHO |
分类号 |
C03C25/68;B44C1/22;H01L21/302;H01L21/461 |
主分类号 |
C03C25/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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