发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which requires less photolithography process steps of manufacturing a transistor than before. <P>SOLUTION: The present invention relates to a semiconductor device comprising a circuit including a transistor having an oxide semiconductor layer over a first substrate and a second substrate fixed to the first substrate with a sealant. A closed space surrounded by the sealant, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air. The sealant surrounds at least the transistor and has a closed pattern shape. Further, the circuit is a driver circuit including a transistor having an oxide semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012168520(A) |
申请公布日期 |
2012.09.06 |
申请号 |
JP20120013861 |
申请日期 |
2012.01.26 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
HAYAKAWA MASAHIKO;MORIYA YUTA;GOTO JUNYA;ARAI YASUYUKI |
分类号 |
G02F1/1345;G02F1/1368;G09F9/30;H01L29/786 |
主分类号 |
G02F1/1345 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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