发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which requires less photolithography process steps of manufacturing a transistor than before. <P>SOLUTION: The present invention relates to a semiconductor device comprising a circuit including a transistor having an oxide semiconductor layer over a first substrate and a second substrate fixed to the first substrate with a sealant. A closed space surrounded by the sealant, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air. The sealant surrounds at least the transistor and has a closed pattern shape. Further, the circuit is a driver circuit including a transistor having an oxide semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012168520(A) 申请公布日期 2012.09.06
申请号 JP20120013861 申请日期 2012.01.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HAYAKAWA MASAHIKO;MORIYA YUTA;GOTO JUNYA;ARAI YASUYUKI
分类号 G02F1/1345;G02F1/1368;G09F9/30;H01L29/786 主分类号 G02F1/1345
代理机构 代理人
主权项
地址