| 摘要 |
The present invention is a silicon single crystal pulling apparatus based on Czochralski method, including a crucible for receiving a raw material, a heater for heating the raw material into a raw material melt, a main chamber accommodating the crucible and the heater, a shield disposed between the heater and the main chamber for shielding a radiant heat from the heater, and a supporting member holding the heater and the shield from below, the supporting member being movable vertically whereby the heater and the shield can move vertically together. As a result, there is provided a silicon single crystal pulling apparatus that facilitates the adjustment of thermal history, the improvement of pulling rate of a silicon single crystal, and the reduction in oxygen concentration. |
