| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal oxide semiconductor film of which the rotation domains and warp are reduced.SOLUTION: A crystal oxide semiconductor film is formed by mist on a base through a buffer layer having a quantum well structure arranged by alternately laminating at least one first layer and at least one second layer including, as a primary component, a material different from that of the first layer. The crystal oxide semiconductor film has a corundum structure, and comprises, as a primary component, an oxide semiconductor including at least one or more kinds of a group consisting of aluminum, gallium and indium. In the film, rotation domains account for 0.02 vol.% or less.SELECTED DRAWING: None |
