发明名称 |
Temperature sensor circuit and semiconductor device including temperature sensor circuit |
摘要 |
To provide a highly accurate temperature sensor circuit. The temperature sensor circuit includes a first constant current circuit; a first diode in which a first voltage reflecting the temperature of an object to be detected is generated between an anode and a cathode in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second diode which includes an oxide semiconductor and in which a second voltage is generated between an anode and a cathode in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage. |
申请公布号 |
US9435696(B2) |
申请公布日期 |
2016.09.06 |
申请号 |
US201313873550 |
申请日期 |
2013.04.30 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Koyama Jun;Yamazaki Shunpei |
分类号 |
G01K7/01 |
主分类号 |
G01K7/01 |
代理机构 |
Robinson Intellectual Property Law Office |
代理人 |
Robinson Intellectual Property Law Office ;Robinson Eric J. |
主权项 |
1. A temperature sensor circuit comprising:
a first constant current circuit; a first semiconductor element where a first voltage is generated between a pair of terminals in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second semiconductor element where a second voltage is generated between a pair of terminals in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage, wherein a rate of change in the first voltage with a first temperature of the first semiconductor element is greater than a rate of change in the second voltage with a second temperature of the second semiconductor element, wherein a value of the first temperature is the same as a value of the second temperature, wherein the second semiconductor element comprises an oxide semiconductor, and wherein the first semiconductor element comprises a semiconductor other than the oxide semiconductor. |
地址 |
Kanagawa-ken JP |