发明名称 Temperature sensor circuit and semiconductor device including temperature sensor circuit
摘要 To provide a highly accurate temperature sensor circuit. The temperature sensor circuit includes a first constant current circuit; a first diode in which a first voltage reflecting the temperature of an object to be detected is generated between an anode and a cathode in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second diode which includes an oxide semiconductor and in which a second voltage is generated between an anode and a cathode in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage.
申请公布号 US9435696(B2) 申请公布日期 2016.09.06
申请号 US201313873550 申请日期 2013.04.30
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Koyama Jun;Yamazaki Shunpei
分类号 G01K7/01 主分类号 G01K7/01
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A temperature sensor circuit comprising: a first constant current circuit; a first semiconductor element where a first voltage is generated between a pair of terminals in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second semiconductor element where a second voltage is generated between a pair of terminals in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage, wherein a rate of change in the first voltage with a first temperature of the first semiconductor element is greater than a rate of change in the second voltage with a second temperature of the second semiconductor element, wherein a value of the first temperature is the same as a value of the second temperature, wherein the second semiconductor element comprises an oxide semiconductor, and wherein the first semiconductor element comprises a semiconductor other than the oxide semiconductor.
地址 Kanagawa-ken JP