发明名称 METHODS OF FORMING CONDUCTIVE AND RESISTIVE CIRCUIT STRUCTURES IN AN INTEGRATED CIRCUIT OR PRINTED CIRCUIT BOARD
摘要 Described examples include methods of fabricating conductive and resistive structures by direct-write variable impedance patterning using nanoparticle-based metallization layers or chemical reaction-based deposition. In some examples, a low conductivity nanoparticle material is deposited over a surface. The nanoparticle material is selectively illuminated at different applied energy levels via illumination source power adjustments and/or scan rate adjustments for selective patterned sintering to create conductive circuit structures as well as resistive circuit structures including gradient resistive circuit structures having an electrical resistivity profile that varies along the structure length. Further examples include methods in which a non-conductive reactant layer is deposited or patterned, and a second solution is deposited in varying amounts using an additive deposition for reaction with the reactant layer to form controllably conductive structures.
申请公布号 US2016295696(A1) 申请公布日期 2016.10.06
申请号 US201514674809 申请日期 2015.03.31
申请人 Texas Instruments Incorporated 发明人 Cook Benjamin S.;Herbsommer Juan Alejandro
分类号 H05K1/16;H05K1/09;H05K3/30 主分类号 H05K1/16
代理机构 代理人
主权项 1. A method of fabricating conductive and resistive structures, the method comprising: depositing a metallic nanoparticle material over a surface, the metallic nanoparticle material having an initial low conductivity; selectively illuminating a first portion of the deposited metallic nanoparticle material at a first applied energy level to increase the conductivity of the first portion of the deposited metallic nanoparticle material to create a conductive circuit structure; selectively illuminating a second portion of the deposited metallic nanoparticle material at a second applied energy level to create a resistive circuit structure, the second applied energy level being less than the first applied energy level.
地址 Dallas TX US