发明名称 半導体ウェハの評価方法及び半導体ウェハ評価装置
摘要 Provided is a semiconductor wafer evaluation method of performing an evaluation of electrical characteristics of a semiconductor wafer by bringing mercury into contact with a surface of the semiconductor wafer, the method including using a probe constituted of a fixed electrode having a tip end portion and a transparent covering portion that covers a portion other than the tip end portion of the fixed electrode, the fixed electrode being made of a metal having stronger wettability with respect to the mercury than the semiconductor wafer and the covering portion, and measuring the electrical characteristics by attaching the mercury to the tip end portion of the fixed electrode and then bringing the mercury into contact with the surface of the semiconductor wafer.
申请公布号 JP6031279(B2) 申请公布日期 2016.11.24
申请号 JP20120154703 申请日期 2012.07.10
申请人 昭和電工株式会社 发明人 岡野 太一
分类号 G01R31/26;G01R1/06;H01L21/66 主分类号 G01R31/26
代理机构 代理人
主权项
地址