| 摘要 |
A method for producing a SiC single crystal having a large growth thickness of 10 mm or greater by a solution process is provided. This is achieved by a method for producing a SiC single crystal, wherein a SiC seed crystal substrate is contacted with a Si—C solution with a temperature gradient, in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, and wherein the temperature gradient in the surface region of the Si—C solution is increased at least once while the SiC single crystal is grown with the (000-1) face as the growth surface, to grow a SiC single crystal having a growth thickness of 10 mm or greater. |
