| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device.SOLUTION: The present invention provides a semiconductor device that comprises a first conductivity type of substrate having an active region and a termination region; a first conductivity type of an epitaxial layer on the substrate; a plurality of first and second trenches in the epitaxial layer; an implantation block layer formed on bottom parts of the first and second trenches; a liner having the second conductivity differing from the first conductivity type and conformally formed along side walls of the first and second trenches; a dielectric material filled in the first and second trenches defining a plurality of first and second columns respectively; a gate dielectric layer on the epitaxial layer; two floating gates formed on the gate dielectric layer; a source region; an interlayer insulation film layer; and a contact plug formed on the source region. |
