发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a protruding electrode capable of supporting microfabrication of a pitch size between bump electrodes and securing reliability in mounting. <P>SOLUTION: A process of forming the bump electrode includes steps of forming first photosensitive resin 20 entirely on a common electrode film 24, patterning the first photosensitive resin to form an opening on an electrode pad 14, a step of forming a first bump electrode 28 beyond the thickness of the first photosensitive resin in its opening using the common electrode film as a plating electrode, steps of forming second photosensitive resin 26 entirely, patterning the second resin and forming an opening on the electrode pad, and a step of forming a second bump electrode 30 on the first bump electrode in the opening of the second photosensitive resin using the common electrode film as the plating electrode. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006269712(A) 申请公布日期 2006.10.05
申请号 JP20050085315 申请日期 2005.03.24
申请人 CITIZEN WATCH CO LTD 发明人 TAGUCHI NOBORU
分类号 H01L21/60 主分类号 H01L21/60
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