SEMICONDUCTOR MEMORY DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that increases the coupling capacity in which a control gate is coupled with a floating gate even when a memory cell is microfabricated. Ž<P>SOLUTION: The semiconductor memory device may include a tunneling dielectric film 103 provided on a semiconductor substrate; floating gates FG1 and FG2 formed on the tunneling dielectric film and according to memory cells; a gate dielectric film 104 provided on the floating gate; and a control gate CG provided on the gate dielectric film, wherein the floating gate provided according to a single memory cell has a first gate part FG1 and a second gate part FG2, and the floating gate has a part in which the tunneling dielectric film and the gate dielectric film contact between the first gate part and the second gate part within the memory cell. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž