发明名称 METHOD FOR PRODUCING NITRIDE CRYSTAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a nitride crystal capable of obtaining a high-quality nitride crystal without generating corrosion of an inner wall of a pressure-resistant vessel, even if a reaction vessel is broken. <P>SOLUTION: In this method for producing a nitride crystal, a reaction vessel 2 is filled with a raw material 5, an acidic mineralizer and ammonia, and closed tightly, then the reaction vessel is installed in a pressure-resistant vessel 1, and further a second solvent is filled into a gap between the pressure-resistant vessel and the reaction vessel, then a crystal is grown in a supercritical and/or subcritical ammonia atmosphere in the reaction vessel, wherein the acidic mineralizer or a material for generating a reaction product 23 by being reacted with acid generated from the acidic mineralizer is made to exist in the gap between the pressure-resistant vessel and the reaction vessel. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012171862(A) 申请公布日期 2012.09.10
申请号 JP20120032070 申请日期 2012.02.16
申请人 MITSUBISHI CHEMICALS CORP 发明人 FUJISAWA HIDEO;MIKAWA YUTAKA
分类号 C30B29/38;C30B9/12 主分类号 C30B29/38
代理机构 代理人
主权项
地址