| 发明名称 |
MEMORY DEVICE |
| 摘要 |
Disclosed is a memory device having a magnetic tunnel junction comprising a free layer, a tunnel barrier and a pinned layer, wherein the free layer comprises at least two layers having magnetism of mutually different directions. |
| 申请公布号 |
WO2016148392(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
WO2016KR01130 |
申请日期 |
2016.02.02 |
| 申请人 |
IUCF-HYU |
发明人 |
PARK, Jea Gun;LEE, Seung Eun |
| 分类号 |
H01L43/02;H01L43/08;H01L43/10 |
主分类号 |
H01L43/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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