HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE

摘要

[Problem] To provide a Ga2O3-based high withstand voltage Schottky barrier diode having excellent withstand voltage characteristics. [Solution] According to one embodiment of the present invention, provided is a high withstand voltage Schottky barrier diode 1 having: a first layer 10, which is formed of a first Ga2O3-based single crystal containing a first Group IV element, and Cl at a concentration equal to or lower than 5×1016 cm-3, and which has an effective donor concentration not lower than 1×1013 but not higher than 6.0×1017 cm-3; a second layer 12, which is formed of a second Ga2O3-based single crystal containing a second Group IV element, and which has an effective donor concentration that is higher than that of the first layer 10, said second layer being laminated on the first layer 10; an anode electrode 14 formed on the first layer 10; and a cathode electrode 15 formed on the second layer 12.