| 摘要 |
PROBLEM TO BE SOLVED: To provide a high productivity mass manufacturing method of SiO tablet good in quality, and low in the generation of crash by pressure. SOLUTION: In this manufacturing method of SiO tablet, primarily sintered SiO tablet is secondarily sintered in an atmosphere of vacuum or an inactive gas at not lower than 1,000°C but not higher than 1,390°C, a SiO powder is pressure molded, then primarily sintered in an atmospheric furnace at lower than 1,000°C, and then it is secondarily sintered in an atmosphere of vacuum or an inactive gas at not lower than 1,000°C but not higher than 1,390°C. Alternatively, a SiO powder is pressure molded and then it is sintered in an atmosphere of vacuum or an inactive gas at not lower than 1,000°C but not higher than 1,390°C. COPYRIGHT: (C)2007,JPO&INPIT
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