| 摘要 |
When a driving signal changes from L level to H level, a switching-circuit is turned on. Then, a gate current flows from a booster circuit to MOSFET through the switching circuit and a resistor. A gate monitor circuit outputs a drive abnormality detection signal of L level when the gate current exceeds a predetermined threshold value. A switching circuit and MOSFET are also similarly driven by a driving signal, and a gate monitor circuit also similarly outputs a drive abnormality detection signal of the L level. When the drive abnormality detection signal changes to the L level, the driving signals are brought to the L level, and the MOSFETs are separated from the booster circuit.
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