发明名称 |
METHOD FOR MANUFACTURING DIELECTRIC MEMORY |
摘要 |
A method includes the steps of: forming a first insulation film on a substrate; forming a hole in the first insulation film; forming a lower electrode on a bottom surface and a sidewall surface of the hole; forming a capacitor insulation film on the lower electrode; forming a second conductive layer on the capacitor insulation film; forming a second insulation film on the second conductive layer so that the second insulation film fills a recess corresponding to the hole; forming a resist mask on the second insulation film so that the resist mask covers the recess; patterning the second insulation film by using the resist mask; and patterning the second conductive layer and the capacitor insulation film by using the patterned second insulation film as a hard mask. By dry etching using a hard mask, a dielectric capacitor having a three-dimensionally stacked structure can be formed with a high yield.
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申请公布号 |
US2007287249(A1) |
申请公布日期 |
2007.12.13 |
申请号 |
US20070758376 |
申请日期 |
2007.06.05 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YOSHIDA HIROSHI;ITO TOYOJI;NAGANO YOSHIHISA |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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